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2024年3月17日发(作者:)
专利内容由知识产权出版社提供
专利名称:Complementary junction-narrowing implants
for formation of ultra-shallow junctions
发明人:Jain, Amitabh,Butler, Stephanie W.
申请号:EP04101123.0
申请日:20040318
公开号:EP1460680A3
公开日:20050817
专利附图:
摘要:Methods are disclosed for forming ultra shallow junctions in semiconductor
substrates using multiple ion implantation steps. The ion implantation steps include
implantation of at least one electronically-active dopant such as boron (320) as well as
the implantation of at least two species, such as fluorine (310) and antimony (300),
effective at limiting junction broadening by channeling during dopant implantation and/or
by thermal diffusion. Following dopant implantation, the electronically-active dopant is
activated by thermal processing (330).
申请人:TEXAS INSTRUMENTS INCORPORATED
地址:P.O. Box 655474, 13500 North Central Expressway Dallas, TX 75265 US
国籍:US
代理机构:Holt, Michael
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