PIC18F*K80程序存储器读写（c语言实现）

存储器读写（c语言实现）"/>

PIC18F*K80程序存储器读写（c语言实现）

写程序存储器

#define tmpBuffer[64]  //是要写入的数据 
#define ProgrammingBuffer[64]  //临时缓存//写FlashBlock（一个块为64字节）
void WriteFlashBlock(void) {uint8_t i;//将64字节读入RAM。TBLPTRU = 0x00;TBLPTRH = HIGH_BYTE(ProgrammedPointer);TBLPTRL =  LOW_BYTE(ProgrammedPointer);for (i = 0; i < WRITE_BLOCK_SIZE; i++) {asm("tblrdpostinc");  ProgrammingBuffer[i] = TABLAT;        }    //根据需要更新RAM中的数据值。for (i = OffsetHead; i < OffsetTail; i++) {ProgrammingBuffer[i] = tmpBuffer[i];}//用擦除的地址加载表指针寄存器。TBLPTRU = 0x00;TBLPTRH = HIGH_BYTE(ProgrammedPointer);TBLPTRL =  LOW_BYTE(ProgrammedPointer);EECON1  = 0b10010100;    //准备清除闪存//执行行擦除过程。UnlockAndActivate(CORRECT_UNLOCK_KEY);asm("tblrdpostdec");    //参考手册写数据到FLASH程序内存的示例// 用正在写入的第一个字节的地址加载表指针寄存器。TBLPTRU = 0x00;TBLPTRH = HIGH_BYTE(ProgrammedPointer);TBLPTRL =  LOW_BYTE(ProgrammedPointer);//TBLPTRL =  LOW_BYTE(ProgrammedPointer + OffsetHead);// 用自动增量将64字节写入持有寄存器。for (i = 0; i < WRITE_BLOCK_SIZE; i++) {TABLAT = ProgrammingBuffer[i];asm("tblwtpostinc");}    asm("tblrdpostdec");// 执行写过程。EECON1 = 0b10000100;    //设置 EECON1 寄存器来执行写操作：将 EEPGD 位置 1 以指向程序存储器,将 CFGS 位清零以访问程序存储器,将 WREN 置 1 以使能字节写操作.UnlockAndActivate(CORRECT_UNLOCK_KEY); //执行写入flash操作
}//激活并开始写入Flash
void UnlockAndActivate(unsigned char UnlockKey)
{INTCONbits.GIE = 0;     //禁用中断。if(UnlockKey != CORRECT_UNLOCK_KEY){OSCCON = 0x03;  //切换到低频率的INTOSCwhile(1){Sleep();  //死循环}    Reset();  //复位}    

读程序存储器

unsigned long   addr32;     // for PIC18FXXK80
unsigned char rdata[8]; 
addr32=0x2000;
TBLPTR = addr32;
//读取从0x2000地址开始的8字节数据
for (i = 0; i < 8; i++) {asm("tblrdpostinc");rdata[i] = TABLAT;
}   

擦除程序存储器

void erase_device(void) {unsigned int i;//擦除用户代码（ROM中START_PAGE_TO_ERASE到MAX_PAGE_TO_ERASE的代码）for (i = START_PAGE_TO_ERASE; i < (MAX_PAGE_TO_ERASE + 1); i++) {ClrWdt(); //清除看门狗#ifdef __XC8__TBLPTRU = 0x00;TBLPTRH = (uint8_t)(i >> 2);TBLPTRL = (uint8_t)(i << 6);#elseTBLPTR = i << 6;   //指定要擦除的块地址#endifEECON1 = 0b10010100;    //准备擦除UnlockAndActivate(CORRECT_UNLOCK_KEY);}